Femtosecond laser–assisted thermal annealing of Ni electrode on SiC substrate
نویسندگان
چکیده
منابع مشابه
CVD growth of 3C-SiC on 4H-SiC substrate
The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 13...
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Thermal annealing effects on the characteristics of intrinsic defects in unintentionally doped 4H–SiC were investigated. The 4H–SiC samples were prepared by Low-Pressure Chemical Vapor Deposition (LPCVD) technique. Results show that there is only one Electron Spin Resonance (ESR) peak and a broad, from green to yellow, photoluminescence (PL) band were detected. These results are attributed to t...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2018
ISSN: 2158-3226
DOI: 10.1063/1.5036804